Paper
1 July 2003 High-speed and highly reliable InP/InGaAs avalanche photodiode for optical communications
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Abstract
We present a review of the characteristics of several different types of high speed InGaAs/InP avalanche photodiode (APD)s that we have developed for different guard ring depth and for different main p-n junction shape. The APD structure that we propose consists of a greatly reduced width in InP multiplication layer and a high doping concentrated electric field buffer layer, where we also adopted a floating guard ring and a shaped main junction with recess etching for a reliable operation of an APD. We obtained high reliability APDs, which are tested for two-dimensional gain behavior and for accelerated life tests by monitoring dark current and breakdown voltage. The gain and bandwidth product of the best of our APDs was measured as high as 80 GHz.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyung-Sook Hyun, Y. Paek, Yong-Hwan Kwon, Ilgu Yun, and El-Hang Lee "High-speed and highly reliable InP/InGaAs avalanche photodiode for optical communications", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.479551
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Cited by 14 scholarly publications.
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KEYWORDS
Avalanche photodetectors

Avalanche photodiodes

Diffusion

Reliability

Capacitance

Etching

Accelerated life testing

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