Paper
8 July 2003 Diode-pumped passively Q-switched nanosecond Raman laser on BaWO4 crystal converter
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Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498638
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic
Abstract
All-solid-state diode-pumped intracavity Raman laser was realized. The laser was based on three-mirror linear cavity with triangular Brewster-angle-cut Nd:YAG slab crystal pumped by 300 W quasi CW diode Q-switched by Cr4+:YAG saturable absorber operated at 1064 nm. The BaWO4 crystal (6×6×33 mm) was used as a Raman converter. After the Raman laser optimization for the first Stokes (1180 nm) the reproducible conversion efficiency was about 40%. The corresponding output energy and pulse duration were 1.46 mJ and 3.5 ns, respectively. The highest Raman laser output energy was reached 2.3 mJ (efficiency 55%). The second and third Stokes with first anti-Stokes lines were also detected at the laser output.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Helena Jelinkova, Pavel Cerny, Jan Sulc, Jan Karol Jabczynski, and Waldemar Zendzian "Diode-pumped passively Q-switched nanosecond Raman laser on BaWO4 crystal converter", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); https://doi.org/10.1117/12.498638
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Cited by 2 scholarly publications.
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KEYWORDS
Raman spectroscopy

Crystals

Laser crystals

Semiconductor lasers

Diodes

Mirrors

Q switched lasers

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