Paper
10 November 2003 Gain and thermal guiding effects in diode-pumped lasers
Author Affiliations +
Proceedings Volume 5120, XIV International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers; (2003) https://doi.org/10.1117/12.515502
Event: XIV International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, 2002, Wroclow, Poland
Abstract
Two models of gain and thermal guiding effects were derived. In the first one the complex ABCD matrix for a crystal under gain and thermal guiding was applied to describe the operation of microchip near threshold. In the second one, the simple iterative procedure was proposed to calculate effective fundamental mode parameters of a cavity under thermal and gain guiding for given bare cavity ABCD matrix and pumping parameters, including gain saturation, passive cavity losses and reabsorption ones. The influence of gain guiding effects causes changes of waist width in the range up to 50% comparing to expectations derived from thermal guiding theory. Application of such method for resonators of passively Q-switched lasers was developed. Results of calculations for microchips were verified with experiment.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Karol Jabczynski, Jacek Kwiatkowski, and Waldemar Zendzian "Gain and thermal guiding effects in diode-pumped lasers", Proc. SPIE 5120, XIV International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, (10 November 2003); https://doi.org/10.1117/12.515502
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KEYWORDS
Thermal effects

Q switched lasers

Thermal modeling

Semiconductor lasers

Q switching

Diodes

Gaussian beams

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