Paper
6 October 2003 Photoelectronic imaging with femto-attosecond precision in laser research
Author Affiliations +
Proceedings Volume 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems; (2003) https://doi.org/10.1117/12.518140
Event: International Conference on Lasers, Applications, and Technologies 2002, 2002, Moscow, Russian Federation
Abstract
Basic advantages and limitations of ultrafast photoelectronic imaging are overviewed. Presented are recent experimental results on recording of Ti: sapphire laser radiation with 200-fs time resolution and 30-line pairs/mm spatial resolution. Some peculiarities in displaying of utlrafast optical events onto the photocathode with femtosecond precision are shortly mentioned. Special emphasis is given to creation of ultra high (10-100 kV/mm) electrical field strength nearby the photocathode surface, as well as to manufacturing various types of femtosecond image converter tubes. To break the femtosecond barrier, a new technique for generation the attosecond bunches of tens keV electrons in quasistationary electromagnetic fields is proposed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikhail Ya. Schelev "Photoelectronic imaging with femto-attosecond precision in laser research", Proc. SPIE 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, (6 October 2003); https://doi.org/10.1117/12.518140
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KEYWORDS
Electrons

Femtosecond phenomena

Printed circuit board testing

Picosecond phenomena

Spatial resolution

Image processing

Physics

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