Characterization of integrated Bragg gratings on silicon-on-insulator rib waveguides

Seong Phun Chan; Vittorio M. N. Passaro; Soon Thor Lim; Ceng E. Png; William Headley; Goran Masanovic; Graham T. Reed; Ragheid M. H. Atta; Graham Ensell; Alan G. R. Evans

doi:10.1117/12.511138

8 December 2003 Characterization of integrated Bragg gratings on silicon-on-insulator rib waveguides

Seong Phun Chan, Vittorio M. N. Passaro, Soon Thor Lim, Ceng E. Png, William Headley, Goran Masanovic, Graham T. Reed, Ragheid M. H. Atta, Graham Ensell, Alan G. R. Evans

Author Affiliations +

Proceedings Volume 5248, Semiconductor Optoelectronic Devices for Lightwave Communication; (2003) https://doi.org/10.1117/12.511138
Event: ITCom 2003, 2003, Orlando, Florida, United States

Abstract

Waveguide based Bragg grating devices have the potential of integration with passive or active optical components. A narrow bandwidth Bragg reflection filter or Fabry-Perot resonant structures can be realised using the approach of periodic refractive index modulation in waveguide gratings to form reflective structures. Most authors have considered 1st order Bragg gratings with periods of the order of 228nm operating at 1550nm but at the expense of complexity and high cost of fabrication. This paper describes the design of Silicon-On-Insulator (SOI) rib waveguides operating in the single mode regime that exhibit low polarisation dependence. A rigorous leaky mode propagation method (LMP) has been used to investigate the influence of etch depth in 3^rd order Bragg gratings on the reflectance and bandwidth in the waveguides.

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Seong Phun Chan, Vittorio M. N. Passaro, Soon Thor Lim, Ceng E. Png, William Headley, Goran Masanovic, Graham T. Reed, Ragheid M. H. Atta, Graham Ensell, and Alan G. R. Evans "Characterization of integrated Bragg gratings on silicon-on-insulator rib waveguides", Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); https://doi.org/10.1117/12.511138

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