Paper
10 June 2004 Femtosecond dynamics of highly excited dielectric thin films
Joachim Zeller, Ali J. Sabbah, Mark Mero, Paul M Alsing, John McIver, Wolfgang G. Rudolph
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Abstract
The dielectric constant of several oxide dielectric thin-films (TiO2, Ta2O5 and HfO2) excited close to the laser-induced damage threshold is retrieved from reflection and transmission measurements with a 40-fs time resolution. The experiments were compared with the results of a numerical solution of the coupled Boltzmann equations for conduction band electrons and phonons, including nonlinear carrier excitation and relaxation processes as well as defect formation. The observed fast sub-100-femtosecond decay is shown to be caused by the interaction of non-equilibrium electrons with phonons and is in qualitative agreement with the results of the computer simulation. The observed sign reversal of the real part of the dielectric function from negative to positive after several hundred femtoseconds is attributed to the formation of self-trapped excitons (STE's) in the forbidden bandgap. Both real and imaginary part of the dielectric function are successfully modeled with the Boltzmann equation when defect formation is included. The simulations show that STE formation leads to efficient, non-thermal excitation of phonon modes on a sub-picosecond time scale.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Zeller, Ali J. Sabbah, Mark Mero, Paul M Alsing, John McIver, and Wolfgang G. Rudolph "Femtosecond dynamics of highly excited dielectric thin films", Proc. SPIE 5273, Laser-Induced Damage in Optical Materials: 2003, (10 June 2004); https://doi.org/10.1117/12.524456
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Cited by 4 scholarly publications.
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KEYWORDS
Phonons

Electrons

Dielectrics

Solar thermal energy

Tantalum

Ionization

Thin films

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