Characterization of the microloading effect in deep reactive ion etching of silicon

Soren Jensen; Ole Hansen

doi:10.1117/12.524461

30 December 2003 Characterization of the microloading effect in deep reactive ion etching of silicon

Soren Jensen, Ole Hansen

Proceedings Volume 5342, Micromachining and Microfabrication Process Technology IX; (2003) https://doi.org/10.1117/12.524461
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States

Abstract

Knowledge of the magnitude and characteristic length scales of chip-scale process variations due to varying substrate pattern density is essential if compensation measures, such as incorporation of dummy structures, are to be taken during mask layout. Effects of variations in local pattern density on a deep reactive ion etch (DRIE) process have been investigated, and a decrease of the etch rate with increasing local pattern density within a characteristic radius of approximately 4.5 mm has been found. Analytical and numerical calculations confirm the existence of a similar depletion radius under the experimental conditions used.

Citation Download Citation

Soren Jensen and Ole Hansen "Characterization of the microloading effect in deep reactive ion etching of silicon", Proc. SPIE 5342, Micromachining and Microfabrication Process Technology IX, (30 December 2003); https://doi.org/10.1117/12.524461

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