Noise measurements in NbN semiconductors thin films deposited on sapphire

Gerard Leroy; Joel Gest; Lode K. J. Vandamme; Olivier Bourgeois

doi:10.1117/12.546507

25 May 2004 Noise measurements in NbN semiconductors thin films deposited on sapphire

Gerard Leroy, Joel Gest, Lode K. J. Vandamme, Olivier Bourgeois

Proceedings Volume 5469, Fluctuations and Noise in Materials; (2004) https://doi.org/10.1117/12.546507
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

In this work, we have characterized three NbN_x thin films deposited on sapphire substrate and compared their noise properties. The three films were measured in the same conditions. In the first time, the films were characterized with an impedance analyzer from 20 Hz to 1 MHz. The films are then considered as a RC dipole with a resistor R in parallel with a capacitor C. With the Nyquist formula, we calculate the noise voltage spectral density S_vTh of the RC dipole considering that only the resistor R exhibits thermal noise in unbiased samples. In the second time, noise measurements were made with the samples biased. Thanks to a four contacts configuration, we checked that contact noise do not contribute to our measurements. The difference between the measured noise and the calculated thermal noise S_vTh shows an extra 1/f noise without GR noise contributions. The 1/f noise in the three films extra noise is compared. These results are also compared to the noise measured on NbN thin films deposited on silicon substrate [1].

Citation Download Citation

Gerard Leroy, Joel Gest, Lode K. J. Vandamme, and Olivier Bourgeois "Noise measurements in NbN semiconductors thin films deposited on sapphire", Proc. SPIE 5469, Fluctuations and Noise in Materials, (25 May 2004); https://doi.org/10.1117/12.546507

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