Temperature behavior of exciton absorption bands in layer semiconductors

V. M. Kramar; N. K. Kramar; Bohdan M. Nitsovich

doi:10.1117/12.560054

4 June 2004 Temperature behavior of exciton absorption bands in layer semiconductors

V. M. Kramar, N. K. Kramar, Bohdan M. Nitsovich

Proceedings Volume 5477, Sixth International Conference on Correlation Optics; (2004) https://doi.org/10.1117/12.560054
Event: Sixth International Conference on Correlation Optics, 2003, Chernivsti, Ukraine

Abstract

The influence of bending waves on the warm-up behavior of exciton absorption bands in layer crystals had been investigated. The effective mass of the current carriers in the layer semiconductor PbI₂ has been computed and used to obtain the values of the exciton-phonon interaction function by pseudopotential method energy spectra calculations. It was shown that the different signs of the warm-up dynamics of an exciton absorptions peak shift and existence of inversion points is related with the concurrent influence of two exciton energy relaxation mechanisms -- on both the bending waves and the lattice phonons.

Citation Download Citation

V. M. Kramar, N. K. Kramar, and Bohdan M. Nitsovich "Temperature behavior of exciton absorption bands in layer semiconductors", Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); https://doi.org/10.1117/12.560054

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