Device performance of AlGaN-based 240-300-nm deep UV LEDs

Arthur J. Fischer; Andrew A. Allerman; Mary Hagerott Crawford; Katherine H. A. Bogart; Stephen R. Lee; Robert J. Kaplar; Weng W. Chow

doi:10.1117/12.567103

20 October 2004 Device performance of AlGaN-based 240-300-nm deep UV LEDs

Arthur J. Fischer, Andrew A. Allerman, Mary Hagerott Crawford, Katherine H. A. Bogart, Stephen R. Lee, Robert J. Kaplar, Weng W. Chow

Author Affiliations +

Proceedings Volume 5530, Fourth International Conference on Solid State Lighting; (2004) https://doi.org/10.1117/12.567103
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

Deep ultraviolet light emitting diodes (LEDs) with emission wavelengths shorter than 300 nm have been grown by metalorganic vapor phase epitaxy. A bottom emitting LED design is used which requires a high-Al content Al_xGa_1-xN (x = 0.5 - 0.8 ) buffer layer which has sufficient conductivity and is transparent to the quantum well emission wavelength. LEDs were flip chip mounted to a silicon submount which provides for good thermal performance as well as improved light extraction. For large area 1 mm x 1 mm LEDs emitting at 297 nm, an output power as high as 2.25 mW under direct current operation has been demonstrated at 500 mA with a forward voltage of 12.5 volts. For shorter wavelength LEDs emitting at 276 nm, an output power as high as 1.3 mW has been demonstrated under direct current operation at 300 mA with a forward voltage of 9.2 volts. Recent improvements in heterostructure design have resulted in quantum well emission at 276 nm with a peak intensity that is 330 times stronger than the largest sub-bandgap peak. LEDs with emission wavelengths as short as 237 nm have also been demonstrated.

Citation Download Citation

Arthur J. Fischer, Andrew A. Allerman, Mary Hagerott Crawford, Katherine H. A. Bogart, Stephen R. Lee, Robert J. Kaplar, and Weng W. Chow "Device performance of AlGaN-based 240-300-nm deep UV LEDs", Proc. SPIE 5530, Fourth International Conference on Solid State Lighting, (20 October 2004); https://doi.org/10.1117/12.567103

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available