External electric field dependence of nonvolatile holographic recording in doubly doped LiNbO<sub>3</sub> crystals

Qianmin Dong; Liren Liu; Dean Liu; Yu Zhou; Juan Zhang

doi:10.1117/12.557875

22 October 2004 External electric field dependence of nonvolatile holographic recording in doubly doped LiNbO₃ crystals

Qianmin Dong, Liren Liu, Dean Liu, Yu Zhou, Juan Zhang

Proceedings Volume 5560, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X; (2004) https://doi.org/10.1117/12.557875
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

External electric field has great effect on grating formation via additional carrier drift during nonvolatile holographic recording. The photorefractive properties of doubly doped LiNbO₃:Fe:Mn crystals are theoretically investigated by jointly solving the two-center material equations with nonzero external electric field and the coupled-wave equations. The external electric field dependence of the refractive-index changes n₁, the diffraction efficiency η as well as the photorefractive sensitivity S are studied for oxidized LiNbO₃:Fe:Mn crystals. Significant improvement of the photorefractive performance has been revealed by applying external electric fields to oxidized LiNbO₃:Fe:Mn. The enhanced material performance under external electric field improves the applicability of doubly doped LN crystals.

Citation Download Citation

Qianmin Dong, Liren Liu, Dean Liu, Yu Zhou, and Juan Zhang "External electric field dependence of nonvolatile holographic recording in doubly doped LiNbO₃ crystals", Proc. SPIE 5560, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X, (22 October 2004); https://doi.org/10.1117/12.557875

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