Paper
20 December 2004 Red light VCSEL for high-temperature applications
Author Affiliations +
Proceedings Volume 5594, Physics and Applications of Optoelectronic Devices; (2004) https://doi.org/10.1117/12.578279
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
Abstract
This contribution drafts the problems of the AlGaInP material system and its consequences for the laser applications in vertical-cavity surface-emitting lasers (VCSEL). The epitaxial and technological solutions to overcome at least parts of the inherent problems were discussed. Calculated data by a cylindrical heat dissipation model were compared with measured power-current curves of 660nm oxide-confined VCSEL to improve the heat removal out of the device. At high temperatures pulsed operation of a 670nm VCSEL is demonstrated, where we could exceeded 0.5mW at +120°C and at +160°C still 25µW optical output power were achieved.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Jetter, Robert Rossbach, Rainer Butendeich, Ferdinand Scholz, Tabitha Ballmann, and Heinz C. Schweizer "Red light VCSEL for high-temperature applications", Proc. SPIE 5594, Physics and Applications of Optoelectronic Devices, (20 December 2004); https://doi.org/10.1117/12.578279
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KEYWORDS
Vertical cavity surface emitting lasers

Aluminum

Reflectivity

Mirrors

Gallium

Oxidation

Temperature metrology

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