Extracting model parameters for MQW lasers' three-level model

Cao Li; Jiang Shan

doi:10.1117/12.570616

31 January 2005 Extracting model parameters for MQW lasers' three-level model

Cao Li, Jiang Shan

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.570616
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

Multiquantum-well (MQW) laser diodes are widely used and being researched for many years. And simulation makes an important part in improving the characteristics of laser diodes. Simulating an equivalent circuit model of lasers is usually used. Many circuit models based on carriers’ and photons’ rate equations have been developed. In the three level scheme, quasi-two-dimensional gateway states between unbound and confined states has been introduced. And it treats each well independently from all the others. So It has more precision than many other models. But before simulation, the parameters in this model are needed. How to get these parameters is vital. But no many people tell us how to do it. This is a complex work. Many parameters can be got from calculation, others must be got from measurement. In this paper the method of getting the parameters is provided. Using these parameters and three level Model for MQW lasers, the dynamic and static behavior are simulated by SPICE circuit emulator.

Citation Download Citation

Cao Li and Jiang Shan "Extracting model parameters for MQW lasers' three-level model", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.570616

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