High-power Al-free SCH-SQW lasers grown by LPE

Zhonghui Li; Ling Wang; Jinhua Yang; Hanben Niu

doi:10.1117/12.570654

20 January 2005 High-power Al-free SCH-SQW lasers grown by LPE

Zhonghui Li, Ling Wang, Jinhua Yang, Hanben Niu

Proceedings Volume 5628, Semiconductor Lasers and Applications II; (2005) https://doi.org/10.1117/12.570654
Event: Photonics Asia, 2004, Beijing, China

Abstract

The Al-free separate confinement hetero-structure (SCH) single quantum-well (SQW) lasers were grown by liquid phase epitaxy (LPE). For 100µm stripe laser with cavity length of 1mm, continuous wave (CW) output power of 4W, slope efficiency of 1.32W/A and far-field pattern of 11°×28°were obtained.

Citation Download Citation

Zhonghui Li, Ling Wang, Jinhua Yang, and Hanben Niu "High-power Al-free SCH-SQW lasers grown by LPE", Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); https://doi.org/10.1117/12.570654

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