Paper
28 February 2006 Diode-end-pumped actively and passively Q-switched Nd:GdVO4 lasers at 1.34 μm
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Abstract
With an acousto-optical Q-switch and Co:LaMgAl11O19(Co:LMA) crystal as the saturable absorber, diode-end-pumped actively and passively Q-switched Nd:GdVO4 lasers at 1.34 μm were demonstrated, respectively. For acousto-optical Q-switched operation, the maximum average output power, the highest pulse energy, the shortest pulse width and the highest peak power were obtained to be 4.54 W, 223 μJ, 19 ns and 11.75 kW, respectively. For passively Q-switched operation with a 0.3-mm-long Co:LMA crystal as the saturable absorber, the maximum average output power, the highest pulse energy, the shortest pulse width and the highest peak power were obtained to be 1.43 W, 112 μJ, 55 ns and 1.95 kW, respectively.
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Chenlin Du, Shuangchen Ruan, Huaijin Zhang, and Yongqin Yu "Diode-end-pumped actively and passively Q-switched Nd:GdVO4 lasers at 1.34 μm", Proc. SPIE 6100, Solid State Lasers XV: Technology and Devices, 61001P (28 February 2006); https://doi.org/10.1117/12.645028
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KEYWORDS
Crystals

Q switched lasers

Q switching

Pulsed laser operation

Semiconductor lasers

Laser crystals

Mirrors

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