Ferroelectric PZT/AlGaN/GaN field effect transistors

Youn-Seon Kang; Bo Xiao; Ya. I. Alivov; Qian Fan; Jinqiao Xie; Hadis Morko

doi:10.1117/12.657584

3 March 2006 Ferroelectric PZT/AlGaN/GaN field effect transistors

Youn-Seon Kang, Bo Xiao, Ya. I. Alivov, Qian Fan, Jinqiao Xie, Hadis Morko

Proceedings Volume 6121, Gallium Nitride Materials and Devices; 61210S (2006) https://doi.org/10.1117/12.657584
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Ferroelectric field effect transistors (FFETs) with hysteretic I-V characteristics were attained with 25 nm thick Pb(Zr_0.52Ti_0.48)O₃ (PZT)/Si₃N₄ gated AlGaN/GaN heterostructure. The PZT films used in the gate of the device was deposited by magnetron rf-sputtering at the substrate temperature of 700 ^oC. Increasing the PZT deposition temperature from that in previous device structures from 600 ^oC to 700 ^oC we obtained much improved device performance in terms of the IV characteristics inclusive of hysteretic behavior. The pinch-off voltage was about 7 V in FFET device compared to 6 V in a the control (conventional) AlGaN/GaN device. Counterclockwise hysteresis appeared in the transfer characteristic curve of a FFET with a maximal drain current shift of about 10 mA at the gate-to-source voltage of -6 V.

Citation Download Citation

Youn-Seon Kang, Bo Xiao, Ya. I. Alivov, Qian Fan, Jinqiao Xie, and Hadis Morko "Ferroelectric PZT/AlGaN/GaN field effect transistors", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210S (3 March 2006); https://doi.org/10.1117/12.657584

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