850 nm asymmetric cladding surface etched DBR lasers with narrow spectral linewidth

R. K. Price; V. C. Elarde; J. J. Coleman

doi:10.1117/12.646204

22 February 2006 850 nm asymmetric cladding surface etched DBR lasers with narrow spectral linewidth

R. K. Price, V. C. Elarde, J. J. Coleman

Proceedings Volume 6133, Novel In-Plane Semiconductor Lasers V; 613317 (2006) https://doi.org/10.1117/12.646204
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Narrow-linewidth (<100 kHz) 850 nm distributed Bragg reflector (DBR) three-section tunable laser diodes are reported. An asymmetric cladding ridge-waveguide structure was used for transverse and lateral mode control. Single longitudinal mode performance was achieved via first-order DBR surface-etched gratings fabricated using inductively-coupled plasma reactive ion etching (ICP-RIE). Epitaxial material with spontaneous emission peak values at 835 nm and 850 nm were used for device fabrication. Stable single-mode powers of up to 30-mW were achieved at 100 mA with spectral side-mode suppression ratio (SMSR) values in excess of 35 dB. Laser tuning by DBR current injection in excess of 7 nm was measured. Narrow spectral linewidths were observed on both sets of devices, with linewidths below 40 kHz for devices with the 835 nm spontaneous emission peak. This is due to the reduced spontaneous emission contribution to the device linewidth. These results demonstrate that extremely narrow linewidths can be achieved using onestep epitaxial growth in an unstrained material system with surface etched first-order gratings on asymmetric cladding ridge-waveguide lasers.

Citation Download Citation

R. K. Price, V. C. Elarde, and J. J. Coleman "850 nm asymmetric cladding surface etched DBR lasers with narrow spectral linewidth", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613317 (22 February 2006); https://doi.org/10.1117/12.646204

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