Effects of annealing on the photoluminescence of terbium-doped zinc oxide nanocrystalline

Guo-li Song; You-Tong Yang

doi:10.1117/12.725829

29 January 2007 Effects of annealing on the photoluminescence of terbium-doped zinc oxide nanocrystalline

Guo-li Song, You-Tong Yang

Proceedings Volume 6279, 27th International Congress on High-Speed Photography and Photonics; 62796Z (2007) https://doi.org/10.1117/12.725829
Event: 27th International congress on High-Speed Photography and Photonics, 2006, Xi'an, China

Abstract

Terbium-doped zinc oxide nanocrystalline are successfully prepared by Sol-Gel process at various annealing temperature from 400°C to 800°C. Photoluminescence spectrum (PL), Photoluminescence spectrum excitation(PLE) and X-ray diffraction pattern(XRD) of nanocrystalline ZnO:Tb³⁺ with excitation wavelength 368nm are measured at room temperature. XRD pattern indicates that nanocrystalline ZnO:Tb³⁺ has a hexagonal wurtzite structure and polycrystalline. The mean grain size of nanocrystalline ZnO:Tb³⁺ was 8nm~12nm calculated by Debye-Scherrer formula. Emission from ⁵D₄→⁷F₆ (485nm), ⁵D₄→⁷F₅ (544nm), ⁵D₄→⁷F₄ (584nm) and ⁵D₄→⁷F₃ (620nm) of Tb³⁺ ions, and wide visible band of ZnO were observed. Relationship between Photoluminescence intensity of the peaks of nanocrystalline ZnO:Tb³⁺ and annealing temperature were given, it was found that the optimal dopant concentration and annealing temperature was 4at% and 600°C. The luminescence process of Tb³⁺-doped zinc oxide nanocrystalline has investigated by using PL, PLE and XRD. Photoluminescence mechanism suggests that there is energy transfer between ZnO nanocrystalline hosts and the doped Tb³⁺ centers.

Citation Download Citation

Guo-li Song and You-Tong Yang "Effects of annealing on the photoluminescence of terbium-doped zinc oxide nanocrystalline", Proc. SPIE 6279, 27th International Congress on High-Speed Photography and Photonics, 62796Z (29 January 2007); https://doi.org/10.1117/12.725829

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