High-brightness 1064-nm grating-outcoupled surface-emitting semiconductor lasers

Scott McWilliams; Nuditha V. Amarasinghe; Taha Masood; Hanxing Shi; Nikolai Stelmakh; Gary A. Evans

doi:10.1117/12.683520

6 September 2006 High-brightness 1064-nm grating-outcoupled surface-emitting semiconductor lasers

Scott McWilliams, Nuditha V. Amarasinghe, Taha Masood, Hanxing Shi, Nikolai Stelmakh, Gary A. Evans

Proceedings Volume 6287, Optical Technologies for Arming, Safing, Fuzing, and Firing II; 62870F (2006) https://doi.org/10.1117/12.683520
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

Photodigm is developing high brightness grating outcoupled surface emitting (GSE) semiconductor lasers with continuous-wave (CW) output power exceeding 1 W at 1064-nm wavelength. The GSE lasers have full-width at halfmaximum (FWHM) spectral bandwidth of less than 0.2 nm and a beam divergence of 1° x 3.4° (FWHM).

Citation Download Citation

Scott McWilliams, Nuditha V. Amarasinghe, Taha Masood, Hanxing Shi, Nikolai Stelmakh, and Gary A. Evans "High-brightness 1064-nm grating-outcoupled surface-emitting semiconductor lasers", Proc. SPIE 6287, Optical Technologies for Arming, Safing, Fuzing, and Firing II, 62870F (6 September 2006); https://doi.org/10.1117/12.683520

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