The amplification of stimulated Brillouin scattering in backward pumped S band distributed fiber Raman amplifier

Honglin Liu; Zaixuan Zhang; Chenxia Li; Haifeng Xu; Jianfeng Wang; Insoo S. Kim

doi:10.1117/12.726523

6 April 2007 The amplification of stimulated Brillouin scattering in backward pumped S band distributed fiber Raman amplifier

Honglin Liu, Zaixuan Zhang, Chenxia Li, Haifeng Xu, Jianfeng Wang, Insoo S. Kim

Author Affiliations +

Proceedings Volume 6595, Fundamental Problems of Optoelectronics and Microelectronics III; 65954G (2007) https://doi.org/10.1117/12.726523
Event: Fundamental Problems of Optoelectronics and Microelectronics III, 2006, Harbin, China

Abstract

The backward cascaded stimulated Brillouin scattering in a backward pumped S band distributed fiber Raman amplifier was researched. The gain medium is G652 fiber. The Raman pump laser is a 1428 nm fiber Raman laser whose power is tunable between 0 and 1W. The signal source is a frequency tunable narrow spectral bandwidth (<100 MHz) external cavity laser. The thresholds of first order and second order stokes SBS are measured as 5mW and 67.6 mW respectively. The stimulated Brillouin scattering lines are amplified by both fiber Raman amplifier and fiber Brillouin amplifier. The saturation gain of first and second stimulated stokes Brillouin lines are about 50 dB and 65dB respectively and the saturation gain of 25 km G652 backward fiber Raman amplifier is about 25 dB, so the gain of first and second stimulated stokes Brillouin lines are about 25 dB and 40 dB respectively. It was shown that the fiber Raman amplifier can assist the stimulated Brillouin scattering greatly. If used Raman amplification in BODTR, the measure range of BOTDR can be extended.

Citation Download Citation

Honglin Liu, Zaixuan Zhang, Chenxia Li, Haifeng Xu, Jianfeng Wang, and Insoo S. Kim "The amplification of stimulated Brillouin scattering in backward pumped S band distributed fiber Raman amplifier", Proc. SPIE 6595, Fundamental Problems of Optoelectronics and Microelectronics III, 65954G (6 April 2007); https://doi.org/10.1117/12.726523

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