Paper
12 March 2008 Optical characteristic of ion beam sputter deposited aluminum thin films
Weihua Jin, Chunshui Jin, Hongli Zhu, Lei Liu, Huaijiang Yang
Author Affiliations +
Proceedings Volume 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing; 66241B (2008) https://doi.org/10.1117/12.791125
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China
Abstract
Aluminum is a typical active metal very easy to oxidize. An oxide surface layer of about 2~6nm quickly formed in air which adds difficulty to the optical constants determination. An ex-situ method is used to determine the optical constants of aluminum thin films. First, alumina (Al2O3) thin film is deposited by ion beam sputter deposition. The optical constants and thickness are determined by spectral ellipsoemtry (SE). The thickness is verified by grazing x-ray reflection (GXRR) fitting method; Second, Al thin film with an Al2O3 cap layer on top is deposited. This cap layer is of the same deposition condition with the first step. By fitting the GXRR spectra, the structure information (the thickness of the aluminum and the cap layer, surface roughness and the diffusion between Al-Al2O3) is obtained; Third, based on the acquired structure information, the ellipsometric spectra are fitted. The optical constants of the aluminum layer are extracted with the aid of the Drude model. Finally, an induced transmission filter (ITF) is designed and deposited.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weihua Jin, Chunshui Jin, Hongli Zhu, Lei Liu, and Huaijiang Yang "Optical characteristic of ion beam sputter deposited aluminum thin films", Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 66241B (12 March 2008); https://doi.org/10.1117/12.791125
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KEYWORDS
Aluminum

Thin films

Dielectrics

Metals

Thin film deposition

Ion beams

Oxides

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