The effects of process parameters on the properties of ITO films grown by ion beam-assisted deposition using 90In-10Sn (wt%) alloy

Zhinong Yu; Longfeng Xiang; We Xue; Huaqing Wang; Weiqiang Lu

doi:10.1117/12.791176

12 March 2008 The effects of process parameters on the properties of ITO films grown by ion beam-assisted deposition using 90In-10Sn (wt%) alloy

Zhinong Yu, Longfeng Xiang, We Xue, Huaqing Wang, Weiqiang Lu

Author Affiliations +

Proceedings Volume 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing; 66241P (2008) https://doi.org/10.1117/12.791176
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China

Abstract

ITO films have been grown by ion beam-assisted deposition (IBAD) using 90In-10Sn (wt%) alloy. The electrical and optical properties of these films have been investigated as a function of oxygen flux, evaporation rate, ion energy and substrate temperature during deposition. The films with resistivity as low as cm Ω 2.4 × 10^-3 Ω • cm (at room temperature) and 8 × 10^-4 Ω • cm (at 150°C) have been deposited, and the transmittance of all samples in the visible range is above 82%. The deposited films at room temperature are polycrystalline with a preferred orientation of (222) and the size of crystal particle is about 21nm, and the surface roughness for the ITO films grown at room temperature is Ra=5.32nm.

Citation Download Citation

Zhinong Yu, Longfeng Xiang, We Xue, Huaqing Wang, and Weiqiang Lu "The effects of process parameters on the properties of ITO films grown by ion beam-assisted deposition using 90In-10Sn (wt%) alloy", Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 66241P (12 March 2008); https://doi.org/10.1117/12.791176

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