Paper
26 September 2007 Innovative optical technique speeds up LED wafer scribing production
Leon Chen, Richard Y. L. Hsu, Robbie J. Z. Lee, Todd Lizotte
Author Affiliations +
Abstract
Laser scribing technology was introduced in LED wafer singulation four years ago and has been gaining significant success. But as GaN/Sapphire wafers keep shrinking the LED chip size (8mil) yet continue to remain on a 2" wafer size, laser process engineers face heavy pressure from the LED industry to further increase throughput. Since raising laser power degrades the performance of GaN, a process engineer can't just substitute a higher power laser and expect quicker throughput. Even if the scribing speed can be increased with a higher powered laser, the efficiency on throughput won't be significant because of the small wafer size and enormous amount of dicing streets. In order to efficiently utilize a more powerful laser, beam splitting optic need to be employed to scribe the wafer with simultaneous multiple beams. During production we used a triple beam design and found that even scribing at one-third the speed, we can get more than 30% increase in throughput. How this technique adapts into this application will be presented in this paper, as well as the challenges encountered under a real production environment.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leon Chen, Richard Y. L. Hsu, Robbie J. Z. Lee, and Todd Lizotte "Innovative optical technique speeds up LED wafer scribing production", Proc. SPIE 6663, Laser Beam Shaping VIII, 66630J (26 September 2007); https://doi.org/10.1117/12.736470
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Light emitting diodes

Beam splitters

Laser applications

Wafer-level optics

Diffractive optical elements

Laser optics

RELATED CONTENT

VLED for Si wafer-level packaging
Proceedings of SPIE (February 27 2012)
Nitride LED chip separation technologies
Proceedings of SPIE (November 26 2002)

Back to Top