Paper
9 January 2008 Impurities in solar-grade silicon
D. Macdonald, J. Tan
Author Affiliations +
Proceedings Volume 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV; 68000X (2008) https://doi.org/10.1117/12.753494
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia
Abstract
Unintentional impurities can play a significant role in reducing the efficiency of crystalline silicon solar cells. With the advent of low-cost solar-grade silicon feedstocks, this is likely to remain the case well into the future. The purpose of this paper is to review the most important impurities in directionally-solidified ingot-grown multicrystalline silicon, their chemical states, where they come from, and the most commonly used techniques to detect them.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Macdonald and J. Tan "Impurities in solar-grade silicon", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68000X (9 January 2008); https://doi.org/10.1117/12.753494
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CITATIONS
Cited by 11 scholarly publications.
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KEYWORDS
Silicon

Iron

Metals

Chromium

Copper

Oxygen

Manganese

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