Semiconductor laser frequency-stabilization: influence of multi-position temperature controls

M. Yanagisawa; K. Nakano; S. Maehara; T. Sato; M. Ohkawa; T. Maruyama; S. Kawamura

doi:10.1117/12.761595

22 February 2008 Semiconductor laser frequency-stabilization: influence of multi-position temperature controls

M. Yanagisawa, K. Nakano, S. Maehara, T. Sato, M. Ohkawa, T. Maruyama, S. Kawamura

Proceedings Volume 6889, Physics and Simulation of Optoelectronic Devices XVI; 688917 (2008) https://doi.org/10.1117/12.761595
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The precise interferometric systems employed in today's artificial satellites require semiconductor lasers of the highest callibur. But, one particularly large obstacle has stood in the way of their broad application; the stabilization of their oscillation frequencies. While a number of different approaches have been tested, none have provided overall, long-term stability. Most recently, we used a Doppler-free absorption line of Rb atoms with a precision temperature controller and an improved laser mount; in this instance, relative optical frequency stability rated 9.07×10^-13 ≤ σ(2,τ) ≤ 7.54×10^-10, in averaging time for 0.01s ≤ τ ≤ 23s. Furthermore, we heated the Rb cell to up to 313K, in order to enhance the control signal and improve oscillation frequency stability.

Citation Download Citation

M. Yanagisawa, K. Nakano, S. Maehara, T. Sato, M. Ohkawa, T. Maruyama, and S. Kawamura "Semiconductor laser frequency-stabilization: influence of multi-position temperature controls", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688917 (22 February 2008); https://doi.org/10.1117/12.761595

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