Paper
1 February 2008 Single photon avalanche photodiodes for near-infrared photon counting
Mark A. Itzler, Xudong Jiang, Rafael Ben-Michael, Bruce Nyman, Krystyna Slomkowski
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Abstract
InP-based single photon avalanche diodes (SPADs) have proven to be the most practical solution currently available for many applications requiring high-performance photon counting at near-infrared wavelengths between 1.0 and 1.6 µm. We describe recent progress in the design, characterization, and modeling of InP-based SPADs, particularly with respect to the dark count rate vs. photon detection efficiency metric of devices optimized for use at both 1.55 μm and 1.06 μm. In this context, we report for the first time dark count probabilities as low as 7 x 10-7 ns-1 for fiber-coupled 1.55 μm SPADs operated at 20% detection efficiency and 215 K. Additionally, because of the critical role played by afterpulsing in limiting photon counting rates, we describe recent characterization of the dependence of afterpulsing effects on SPAD operating conditions such as photon detection efficiency, repetition rate, and bias gate length.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark A. Itzler, Xudong Jiang, Rafael Ben-Michael, Bruce Nyman, and Krystyna Slomkowski "Single photon avalanche photodiodes for near-infrared photon counting", Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69001E (1 February 2008); https://doi.org/10.1117/12.768564
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Cited by 12 scholarly publications.
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KEYWORDS
Absorption

Photodetectors

Single photon

Data modeling

Photon counting

Sensors

Avalanche photodetectors

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