Paper
11 March 2008 The heterojunction structure of n-Si/p-nanocrystalline diamond film for UV detection
Linjun Wang, Jianmin Liu, Run Xu, Jian Huang, Weimin Shi, Yiben Xia
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69843K (2008) https://doi.org/10.1117/12.792200
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
A heterostructure of nanocrystalline diamond film / n-Si was fabricated successfully, where the un-doped p-type nanocrystalline diamond (NCD) film was grown by an electron assisted hot filament chemical vapor deposition (EA-HFCVD) technology. The structure and morphology of the NCD film were analyzed by Raman spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM). I-V characteristic of the p-NCD/n-Si heterojunction indicated that this structure was rectifying in nature with a turn-on voltage of ~0.5V. The p-NCD/n-Si heterostructure was also used for UV detector applications. Operating at a bias voltage of 10V, this photodetector showed a significant discrimination between UV and visible light, and the UV/visible-blind ratio was about three orders of magnitude.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Linjun Wang, Jianmin Liu, Run Xu, Jian Huang, Weimin Shi, and Yiben Xia "The heterojunction structure of n-Si/p-nanocrystalline diamond film for UV detection", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69843K (11 March 2008); https://doi.org/10.1117/12.792200
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KEYWORDS
Diamond

Heterojunctions

Ultraviolet radiation

Ultraviolet detectors

Silicon

Chemical vapor deposition

Scanning electron microscopy

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