Paper
19 March 2009 Super-resolution nanopatterns and optical recording in chalcogenide phase change thin films by direct laser writing
Jingsong Wei, Xinbing Jiao
Author Affiliations +
Proceedings Volume 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage; 712505 (2009) https://doi.org/10.1117/12.825533
Event: Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 2008, Wuhan, China
Abstract
We report experimental results of forming marks about 100~150nm in diameter on chalcogenide alloy thin films with a semiconductor laser of wavelength λ=650nm and a focusing lens of 0.65 numerical aperture (NA). The fact that the mark sizes are obviously smaller than the diffraction limit (The mark diameters are about 1/10 of the focused light spot) is explainable by analyzing the nonlinear absorption inside the thin film that is caused by the focused light spot of a Gaussian intensity distribution.
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Jingsong Wei and Xinbing Jiao "Super-resolution nanopatterns and optical recording in chalcogenide phase change thin films by direct laser writing", Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 712505 (19 March 2009); https://doi.org/10.1117/12.825533
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Cited by 4 scholarly publications.
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KEYWORDS
Thin films

Chalcogenides

Silver indium antimony tellurium

Lithography

Absorption

Semiconductor lasers

Diffraction

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