GaAs/AlGaAs heterojunction as a fast detector of infrared laser pulses

Steponas Ašmontas; Jonas Gradauskas; Viktorija Kazlauskaitė; Algirdas Sužiedėlis; Edmundas Širmulis; Mindaugas Vingelis

doi:10.1117/12.815954

2 December 2008 GaAs/AlGaAs heterojunction as a fast detector of infrared laser pulses

Steponas Ašmontas, Jonas Gradauskas, Viktorija Kazlauskaitė, Algirdas Sužiedėlis, Edmundas Širmulis, Mindaugas Vingelis

Proceedings Volume 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6); 71420N (2008) https://doi.org/10.1117/12.815954
Event: Sixth International Conference on Advanced Optical Materials and Devices, 2008, Riga, Latvia

Abstract

We present experimental study of photoresponse in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond CO₂ laser pulses. This device revealed itself as a fast IR sensor operating at room temperature. Hot carrier effects are proposed to be responsible for the photoresponse formation.

Citation Download Citation

Steponas Ašmontas, Jonas Gradauskas, Viktorija Kazlauskaitė, Algirdas Sužiedėlis, Edmundas Širmulis, and Mindaugas Vingelis "GaAs/AlGaAs heterojunction as a fast detector of infrared laser pulses", Proc. SPIE 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6), 71420N (2 December 2008); https://doi.org/10.1117/12.815954

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