High-power semiconductor lasers for applications requiring GHz linewidth source

Ivan Divliansky; Vadim Smirnov; George Venus; Alex Gourevitch; Leonid Glebov

doi:10.1117/12.810058

23 February 2009 High-power semiconductor lasers for applications requiring GHz linewidth source

Ivan Divliansky, Vadim Smirnov, George Venus, Alex Gourevitch, Leonid Glebov

Proceedings Volume 7198, High-Power Diode Laser Technology and Applications VII; 71981N (2009) https://doi.org/10.1117/12.810058
Event: SPIE LASE: Lasers and Applications in Science and Engineering, 2009, San Jose, California, United States

Abstract

In this paper we present the development of semiconductor laser systems with output powers reaching 100 W and linewidths down to 10 GHz. The combination of high power and narrow emission spectrum was achieved through external resonator configurations based on volume Bragg gratings. By using Bragg gratings with extremely narrow spectral selectivity we were able to narrower and lock emission spectra of diode lasers, with precise wavelength tuning achieved by thermal control of the volume grating. The thermal coefficient of our volume gratings was approximately 8 pm/K, which was low enough to guarantee stable frequency operating regime. We implemented successfully two such schemes for lasers generating at 780 nm and 1.55 μm as pumping sources for Rb vapor and Er-doped solid state lasers, correspondingly.

Citation Download Citation

Ivan Divliansky, Vadim Smirnov, George Venus, Alex Gourevitch, and Leonid Glebov "High-power semiconductor lasers for applications requiring GHz linewidth source", Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 71981N (23 February 2009); https://doi.org/10.1117/12.810058

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