The development of HgCdTe infrared detector technology in China

W. Lu; L. He; X. S. Chen; L. Ding; S. L. Sun; J. Tang; J. H. Su

doi:10.1117/12.819030

6 May 2009 The development of HgCdTe infrared detector technology in China

W. Lu, L. He, X. S. Chen, L. Ding, S. L. Sun, J. Tang, J. H. Su

Proceedings Volume 7298, Infrared Technology and Applications XXXV; 72982Z (2009) https://doi.org/10.1117/12.819030
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

The history and milestones of HgCdTe infrared detector technology in China has been reviewed, including the material growth, device processing and design. It is also presented that the HgCdTe infrared detector has been used well in space remote sensing technology. The current status of HgCdTe technology is focused on focal-plane arrays (FPAs) fabricated with HgCdTe grown on different substrate, including GaAs and Si substrate, by epitaxy method. The FPA imaging, material growth process and interface engineering have been discussed.

Citation Download Citation

W. Lu, L. He, X. S. Chen, L. Ding, S. L. Sun, J. Tang, and J. H. Su "The development of HgCdTe infrared detector technology in China", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72982Z (6 May 2009); https://doi.org/10.1117/12.819030

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