Paper
18 May 2009 Wafer fused InP-GaAs optically pumped semiconductor disk laser operating at 1.57 μm
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Abstract
A wafer fusing was applied to integrate an InP-based active medium and a GaAs/AlGaAs distributed Bragg reflector in an optically pumped semiconductor disk laser. Over 50 mW of output power at room temperature in 1570-1585 nm spectral range was demonstrated. The results of this study reveal an important finding: the wafer fusion can be used in emitters with high power. This approach would allow for monolithic integration of lattice-mismatched compounds, quantum-well and quantum-dot based media and promises substantial wavelength tailoring of semiconductor disk lasers.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jari Lyytikäinen, Jussi Rautiainen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg Okhotnikov "Wafer fused InP-GaAs optically pumped semiconductor disk laser operating at 1.57 μm", Proc. SPIE 7355, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II, 73550C (18 May 2009); https://doi.org/10.1117/12.820672
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Disk lasers

Semiconducting wafers

Semiconductor lasers

Semiconductors

Optical pumping

Mirrors

Optical semiconductors

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