8 Gb/s 0.5 V integrated Ge-on-SOI photodetector

Johann Osmond; Giovanni Isella; Daniel Chrastina; Hans von Känel; Rolf Kaufmann; Laurent Vivien; Gilles Rasigade; Delphine Marris-Morini; Paul Crozat; Eric Cassan; Suzanne Laval

doi:10.1117/12.821714

20 May 2009 8 Gb/s 0.5 V integrated Ge-on-SOI photodetector

Johann Osmond, Giovanni Isella, Daniel Chrastina, Hans von Känel, Rolf Kaufmann, Laurent Vivien, Gilles Rasigade, Delphine Marris-Morini, Paul Crozat, Eric Cassan, Suzanne Laval

Author Affiliations +

Proceedings Volume 7366, Photonic Materials, Devices, and Applications III; 73660B (2009) https://doi.org/10.1117/12.821714
Event: SPIE Europe Microtechnologies for the New Millennium, 2009, Dresden, Germany

Abstract

A vertically illuminated photodetector based on Ge-on-SOI, which operates at 8 Gb/s for reverse bias as low as 0.5 V, is presented. The integrated photodetector also features low dark current and good photogenerated carrier collection efficiency.

Citation Download Citation

Johann Osmond, Giovanni Isella, Daniel Chrastina, Hans von Känel, Rolf Kaufmann, Laurent Vivien, Gilles Rasigade, Delphine Marris-Morini, Paul Crozat, Eric Cassan, and Suzanne Laval "8 Gb/s 0.5 V integrated Ge-on-SOI photodetector", Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73660B (20 May 2009); https://doi.org/10.1117/12.821714

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