Paper
1 March 2010 Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells
Huynh Thanh Duc, Jens Förstner, Torsten Meier
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Abstract
A microscopic theory that describes injection currents in GaAs quantum wells is presented. 14 × 14 band k.p theory is used to compute the band structure including anisotropy and spin-orbit interaction. Transient injection currents are obtained via numerical solutions of the semiconductor Bloch equations. Depending on the growth direction of the considered quantum well system and the propagation and polarization directions of the incident light beam, it is possible to generate charge and/or spin photocurrents on ultrashort time scales. The dependence of the photocurrents on the excitation conditions is computed and discussed.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huynh Thanh Duc, Jens Förstner, and Torsten Meier "Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells", Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 76000S (1 March 2010); https://doi.org/10.1117/12.840388
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KEYWORDS
Quantum wells

Semiconductors

Gallium arsenide

Matrices

Polarization

Optoelectronics

Electroluminescence

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