Paper
18 August 2010 Optical, structural, and nuclear scientific studies of AlGaN with high Al composition
Tse Yang Lin, Yee Ling Chung, Lin Li, Shude Yao, Y. C. Lee, Zhe Chuan Feng, Ian T. Ferguson, Weijie Lu
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Abstract
AlGaN epilayers with higher Al-compositions were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire. Trimethylgallium (TMGa), trimethylaluminium (TMAl) and NH3 were used as the source precursors for Ga, Al, and N, respectively. A 25 nm AlN nucleation layer was first grown at low-temperature of 590 °C at 300 Torr. Followed, AlxGa1-xN layers were grown at 1080 °C on low-temperature AlN nucleation layers. The heterostructures were characterized by a series of techniques, including x-ray diffraction (XRD), Rutherford backscattering (RBS), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering. Precise Al compositions were determined through XRD, RBS, and SEM combined measurements. Room Temperature Raman Scattering spectra shows three major bands from AlGaN alloys, which are AlN-like, A1 longitudinal optical (LO) phonon modes, and E2 transverse optical (TO) band, respectively, plus several peak comes from the substrate. Raman spectral line shape analysis lead to an optical determination of the electrical property free carrier concentration of AlGaN. The optical properties of AlGaN with high Al composition were presented here.
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Tse Yang Lin, Yee Ling Chung, Lin Li, Shude Yao, Y. C. Lee, Zhe Chuan Feng, Ian T. Ferguson, and Weijie Lu "Optical, structural, and nuclear scientific studies of AlGaN with high Al composition", Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 778415 (18 August 2010); https://doi.org/10.1117/12.859106
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KEYWORDS
Aluminum

Sapphire

Gallium

Raman spectroscopy

Scanning electron microscopy

Metalorganic chemical vapor deposition

X-ray diffraction

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