Paper
1 March 2011 Fully coupled piezoelectric models on the optical properties of InGaN quantum dots
K. B. Hong, M. K. Kuo
Author Affiliations +
Abstract
This paper investigates the fully coupled piezoelectric models for determining strain fields, piezoelectric potentials, and optical properties of wurtzite InGaN quantum dots (QDs). Through the calculations, we find that the semi-coupled model clearly overestimates the piezoelectric potential, and the transition energy difference increased with increases in the dot size and indium composition. Consequently, the semi-coupled model causes a great amount of distortion in predicting the optical properties of InGaN QDs, compared to the fully coupled piezoelectric models.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. B. Hong and M. K. Kuo "Fully coupled piezoelectric models on the optical properties of InGaN quantum dots", Proc. SPIE 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 79470R (1 March 2011); https://doi.org/10.1117/12.874337
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Indium gallium nitride

Optical properties

Quantum dots

Gallium nitride

Indium

Piezoelectric effects

Indium nitride

Back to Top