High-peak-power and high-brightness pulsed single and array diode laser sources

Yan Xiao; Don Olson; Toby J. Garrod; Manoj Kanskar

doi:10.1117/12.907665

8 February 2012 High-peak-power and high-brightness pulsed single and array diode laser sources

Yan Xiao, Don Olson, Toby J. Garrod, Manoj Kanskar

Proceedings Volume 8241, High-Power Diode Laser Technology and Applications X; 82410P (2012) https://doi.org/10.1117/12.907665
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

Surface-emitting distributed feedback (SE-DFB) diode lasers possess many advantages compared to edge emitters, in terms of power, brightness and spectral characteristics. We have demonstrated 312 W and 68 W of peak power at 1-μs pulse duration and 100-Hz repetition rate from single 97x nm SE-DFB laser chips with electrically-pumped stripe of 3.75 mm² and 0.18 mm² respectively, achieving a power density of 378 W/mm². Under the same pulsing condition, we have also demonstrated current-limited 206 W of peak power out of a 100 μm / 0.22 NA fiber with only two 2x1 chiplevel SE-DFB laser arrays.

Citation Download Citation

Yan Xiao, Don Olson, Toby J. Garrod, and Manoj Kanskar "High-peak-power and high-brightness pulsed single and array diode laser sources", Proc. SPIE 8241, High-Power Diode Laser Technology and Applications X, 82410P (8 February 2012); https://doi.org/10.1117/12.907665

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