On mechanism of quantum dots' growth in semiconductor hererosystems

R. D. Vengrenovich; B. V. Ivanskii; I. Ya. Fuchyla; A. V. Moskalyuk; M. O. Stasyk

doi:10.1117/12.919776

22 November 2011 On mechanism of quantum dots' growth in semiconductor hererosystems

R. D. Vengrenovich, B. V. Ivanskii, I. Ya. Fuchyla, A. V. Moskalyuk, M. O. Stasyk

Proceedings Volume 8338, Tenth International Conference on Correlation Optics; 833811 (2011) https://doi.org/10.1117/12.919776
Event: Correlation Optics 2011, 2011, Chernivsti, Ukraine

Abstract

Quantitative technique for comparison of experimentally obtained histograms with theoretically calculated size distribution functions of clusters in heterosystems is introduced. The most important characteristics of theoretically derived size distributions as dependences on the growth mechanism and form of clusters are computed using calculated magnitudes of the initial and central momentums. Obtained quantitative characteristics are compared with the corresponding ones for experimentally obtained histograms. Theoretical dependence to the best advantage fitting experimentally obtained histogram is found out on the results of such comparison.

Citation Download Citation

R. D. Vengrenovich, B. V. Ivanskii, I. Ya. Fuchyla, A. V. Moskalyuk, and M. O. Stasyk "On mechanism of quantum dots' growth in semiconductor hererosystems", Proc. SPIE 8338, Tenth International Conference on Correlation Optics, 833811 (22 November 2011); https://doi.org/10.1117/12.919776

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