Analysis Of Franz-Keldysh Electro-Optic Modulation In InP, GaAs, GaSb, InAs, And InSb

Brian R. Bennett; Richard A. Soref

doi:10.1117/12.967524

1 January 1987 Analysis Of Franz-Keldysh Electro-Optic Modulation In InP, GaAs, GaSb, InAs, And InSb

Brian R. Bennett, Richard A. Soref

Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967524
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Effective mass theory and zero-field absorption data are used to calculate electric-field-induced changes in optical refraction and absorption (the Franz-Keldysh effect) for five direct gap III-V semiconductors: InP, GaAs, GaSb, InAs, and InSb. Results are given for fields of 10⁴ V/cm to the estimated breakdown strength and for photon energies of 40 and 80 meV below the band gap for each semiconductor.

Citation Download Citation

Brian R. Bennett and Richard A. Soref "Analysis Of Franz-Keldysh Electro-Optic Modulation In InP, GaAs, GaSb, InAs, And InSb", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967524

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