Dark current analysis of long wavelength InAs/GaSb superlattice infrared detector

Yi Zhou; Jianxin Chen; Qingqing Xu; Zhicheng Xu; Chuan Jin; Jiajia Xu; Li He

doi:10.1117/12.978226

15 October 2012 Dark current analysis of long wavelength InAs/GaSb superlattice infrared detector

Yi Zhou, Jianxin Chen, Qingqing Xu, Zhicheng Xu, Chuan Jin, Jiajia Xu, Li He

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 841904 (2012) https://doi.org/10.1117/12.978226
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

Dark current characteristics of long wavelength InAs/GaSb superlattice (SL) detectors have been studied in this paper. The long wavelength SL structure consists of periodic 14 monolayers (MLs) InAs and 7 MLs GaSb with 50% cutoff wavelength around 11 μm. Three InAs/GaSb superlattice detectors of PBIN structure were grown at different temperatures. Wet chemical etching was used to define device mesa. SiO₂ was used for device passivation to suppress the sidewall leakage current. Electron barriers were inserted between the absorber region and P-type conducting region to reduce the bulk dark current. The detectors grown at 380oC have the lowest dark current densities as 0.01A/cm² and the best R0A value as 13 Ωcm². We simulated four main dark current mechanisms. The result shows that the intrinsic carrier density is extracted to be 3.5E15 cm^-3 which matches the C-V measurement very well. And the GR and trap assisted tunnel current dominate the dark current of the device due to the large trap densities and short GR lifetimes.

Citation Download Citation

Yi Zhou, Jianxin Chen, Qingqing Xu, Zhicheng Xu, Chuan Jin, Jiajia Xu, and Li He "Dark current analysis of long wavelength InAs/GaSb superlattice infrared detector", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841904 (15 October 2012); https://doi.org/10.1117/12.978226

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