The interfacial properties of AOF/ZnS and LWIR bulk HgCdTe materials by MIS structures

Nili Wang; Shijia Liu; Tianyi Lan; Shuiping Zhao; Peilu Jiang; Xiangyang Li

doi:10.1117/12.975117

15 October 2012 The interfacial properties of AOF/ZnS and LWIR bulk HgCdTe materials by MIS structures

Nili Wang, Shijia Liu, Tianyi Lan, Shuiping Zhao, Peilu Jiang, Xiangyang Li

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 84191D (2012) https://doi.org/10.1117/12.975117
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

The semiconductor-passivating layer interface, as well as the dielectric properties of the passivants, plays an important role in HgCdTe based photoelectric detectors. Anodization is a commonly uses surface passivation for HgCdTe. ZnS is deposited on the AOF (anodic-oxide film) as antireflecting layer. The interfacial properties of the metal insulator semiconductor (MIS) structures were determined by capacitance-voltage (C-V) measurements in the frequency range 10 KHz-10 MHz. The results showed that the MIS detector could not reach the high frequency level even at frequencies up to 10 MHz. The interfacial state densities were 3.4×10¹¹ cm^-2q^-1V^-1 and the fixed charges were 1.1×10¹² cm^-2. The surface recombination velocity was 700 cm/s.

Citation Download Citation

Nili Wang, Shijia Liu, Tianyi Lan, Shuiping Zhao, Peilu Jiang, and Xiangyang Li "The interfacial properties of AOF/ZnS and LWIR bulk HgCdTe materials by MIS structures", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191D (15 October 2012); https://doi.org/10.1117/12.975117

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