Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells

Papichaya Chaisakul; Delphine Marris-Morini; Giovanni Isella; Daniel Chrastina; Mohamed-Saïd Rouifed; Jacopo Frigerio; Eleonora Gatti; Xavier Le Roux; Samson Edmond; Eric Cassan; Jean-René Coudevylle; Laurent Vivien

doi:10.1117/12.922095

11 May 2012 Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells

Papichaya Chaisakul, Delphine Marris-Morini, Giovanni Isella, Daniel Chrastina, Mohamed-Saïd Rouifed, Jacopo Frigerio, Eleonora Gatti, Xavier Le Roux, Samson Edmond, Eric Cassan, Jean-René Coudevylle, Laurent Vivien

Author Affiliations +

Proceedings Volume 8431, Silicon Photonics and Photonic Integrated Circuits III; 84310N (2012) https://doi.org/10.1117/12.922095
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

High speed Ge multiple quantum well (MQWs) electro-absorption (EA) modulator is reported. Device development procedures from the epitaxial growth of high quality Ge MQWs by LEPECVD technique, fabrication, and characterization of optoelectronic device are described.

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Papichaya Chaisakul, Delphine Marris-Morini, Giovanni Isella, Daniel Chrastina, Mohamed-Saïd Rouifed, Jacopo Frigerio, Eleonora Gatti, Xavier Le Roux, Samson Edmond, Eric Cassan, Jean-René Coudevylle, and Laurent Vivien "Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310N (11 May 2012); https://doi.org/10.1117/12.922095

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