New Generation MOSFET Design for Battery Powered Portable Applications

Sukhendu Deb Roy; Ritu Sodhi; Steven Sapp

doi:10.1117/12.927361

15 October 2012 New generation MOSFET design for battery powered portable applications

Sukhendu Deb Roy, Ritu Sodhi, Steven Sapp

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490T (2012) https://doi.org/10.1117/12.927361
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

This article reviews some of challenges that the Power MOSFET designers need to address to meet the ever growing market demand for reducing power consumption in battery-powered portable applications. The critical power MOSFET design parameters such as threshold voltage (Vth), drain-source breakdown voltage (BVdss), on-resistance (Rdson), package footprint, gate-drive voltage, and Figure of Merit (FOM) have been discussed. It has been highlighted that the scaling features and ultra-low on-resistance of the Trench Power MOSFETs can be advantageously utilized for powerloss management. The MOSFET design requirements in battery protection circuits and load switches have been presented. It has been emphasized that the Power MOSFET designers need to trade-off between on-resistance and maximum current capability in smaller footprint packages. The merits of Wafer Level Chip Scale Package (WLCSP) in achieving minimum foot print, ultra-low on-resistance, and improved thermal characteristics have been discussed.

Citation Download Citation

Sukhendu Deb Roy, Ritu Sodhi, and Steven Sapp "New generation MOSFET design for battery powered portable applications", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490T (15 October 2012); https://doi.org/10.1117/12.927361

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