Paper
18 April 2013 Overlay accuracy calibration
Author Affiliations +
Abstract
In order to fulfill the ever tightening requirements of advanced node overlay budgets, overlay metrology is becoming more and more sensitive to even the smallest imperfections in the metrology target. Under certain circumstances, inaccuracy due to such target imperfections can become the dominant contribution to the metrology uncertainty and cannot be quantified by the standard TMU contributors. In this paper we describe a calibration method that makes the overlay measurement robust to target imperfections without diminishing its sensitivity to the target overlay. The basic assumption of the method is that overlay measurement result can be approximated as the sum of two terms: the accurate overlay and the measurement inaccuracy (independently of the conventional contributors). While the first term (the “real overlay”) is robust it is known that the overlay target inaccuracy depends on the measurement conditions. This dependence on measurement conditions is used to estimate quantitative inaccuracy by means of the overlay quality merit which was described in previous publications. This paper includes the theoretical basis of the method as well as experimental validation.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eran Amit, Dana Klein, Guy Cohen, Nuriel Amir, Michael Har-Zvi, Cindy Kato, and Hiroyuki Kurita "Overlay accuracy calibration", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86811G (18 April 2013); https://doi.org/10.1117/12.2011416
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Cited by 10 scholarly publications.
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KEYWORDS
Calibration

Overlay metrology

Metrology

Semiconducting wafers

Optical filters

Neodymium

Time metrology

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