High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices

M. Razeghi; A. M. Hoang; A. Haddadi; G. Chen; S. Ramezani-Darvish; P. Bijjam; P. Wijewarnasuriya; E. Decuir

doi:10.1117/12.2019145

18 June 2013 High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices

M. Razeghi, A. M. Hoang, A. Haddadi, G. Chen, S. Ramezani-Darvish, P. Bijjam, P. Wijewarnasuriya, E. Decuir

Author Affiliations +

Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 87041W (2013) https://doi.org/10.1117/12.2019145
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

We report a bias selectable dual-band Type-II superlattice-based short-wave infrared (SWIR) and mid-wave infrared (MWIR) co-located photodetector capable of active and passive imaging. A new double-layer etch-stop scheme is introduced for back-side-illuminated photodetectors, which enhanced the external quantum efficiency both in the SWIR and MWIR spectral regions. Temperature-dependent dark current measurements of pixel-sized 27 μm detectors found the dark current density to be ~1×10^-5 A/cm² for the ∼4.2 μm cut-off MWIR channel at 140 K. This corresponded to a reasonable imager noise equivalent difference in temperature of ∼49 mK using F⁄2.3 optics and a 10 ms integration time (tint), which lowered to ∼13 mK at 110 K using and integration time of 30 ms, illustrating the potential for high-temperature operation. The SWIR channel was found to be limited by readout noise below 150 K. An excellent imagery from the dual-band imager exemplifying pixel coincidence is shown.

Citation Download Citation

M. Razeghi, A. M. Hoang, A. Haddadi, G. Chen, S. Ramezani-Darvish, P. Bijjam, P. Wijewarnasuriya, and E. Decuir "High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041W (18 June 2013); https://doi.org/10.1117/12.2019145

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available