Paper
31 May 2013 Near-field measurements of submillimeter-wave reflectarrays
Aleksi Tamminen, Juha Ala-Laurinaho, Sampo Mäkelä, David Gomes-Martins, Janne Häkli, Päivi Koivisto, Pekka Rantakari, Jussi Säily, Reijo Tuovinen, Arttu R. Luukanen, Markku Sipilä, Antti V. Räisänen
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Abstract
We present results of experimental characterization of static 650-GHz reflectarrays. The reflectarrays are based on 123-μm circular microstrip patch antennas with tuning stubs as phase shifters. The static reflectarrays are considered as predecessors for active reflectarrays, and therefore the reflectarray elements have two discrete phase-shift values: 0° and -180°. The reflectarrays have 95000 elements, and they have separation of 400 μm. The reflectarrays are fabricated on 150-mm silicon wafers with a ground plane and a 20-μm polyimide substrate atop. The fabricated static reflectarrays are characterized in a near-field measurement range and their beam patterns at the focusing distance of 20 m are calculated with plane-to-plane transform. At this high frequency, fabrication tolerances are difficult to meet and, e.g., over-etching of the antenna and phase-shifting structure may offset the resonance frequency of the reflectarray element by more than its bandwidth.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aleksi Tamminen, Juha Ala-Laurinaho, Sampo Mäkelä, David Gomes-Martins, Janne Häkli, Päivi Koivisto, Pekka Rantakari, Jussi Säily, Reijo Tuovinen, Arttu R. Luukanen, Markku Sipilä, and Antti V. Räisänen "Near-field measurements of submillimeter-wave reflectarrays", Proc. SPIE 8715, Passive and Active Millimeter-Wave Imaging XVI, 871506 (31 May 2013); https://doi.org/10.1117/12.2018606
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Cited by 5 scholarly publications.
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KEYWORDS
Near field

Antennas

Phase shifts

Specular reflections

Scanners

Transmitters

Etching

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