Paper
29 May 2013 Emission and detection of terahertz radiation using two dimensional plasmons in semiconductor nano-heterostructures for nondestructive evaluations
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Abstract
This paper reviews recent advances in emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for nondestructive evaluations. The 2D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron mobility transistor and incorporates the authors’ original asymmetrically interdigitated dual grating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.
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Taiichi Otsuji, Takayuki Watanabe, Stephane Albon Boubanga Tombet, Akira Satou, Victor Ryzhii, Vyacheslav Popov, and Wojciech Knap "Emission and detection of terahertz radiation using two dimensional plasmons in semiconductor nano-heterostructures for nondestructive evaluations", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87250F (29 May 2013); https://doi.org/10.1117/12.2015089
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Cited by 1 scholarly publication.
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KEYWORDS
Terahertz radiation

Plasmons

Electrons

Field effect transistors

Plasma

Sensors

Millimeter wave sensors

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