Focused-Ion-Beam Micromachining Of Diode Laser Mirrors

R. A. Elliott; R. K. DeFreez; J. Puretz; J. Orloff; G. A. Crow

doi:10.1117/12.943928

3 May 1988 Focused-Ion-Beam Micromachining Of Diode Laser Mirrors

R. A. Elliott, R. K. DeFreez, J. Puretz, J. Orloff, G. A. Crow

Proceedings Volume 0876, Communications Networking in Dense Electromagnetic Environments; (1988) https://doi.org/10.1117/12.943928
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

The development of a novel technique of forming optical quality surfaces in semiconductor materials is described. The technique exploits the precise sputter-etching afforded by a beam of 20 keV Ga+ ions focused to a 250 nm spot to micromachine features in the surfaces of semiconductor laser dice and wafers. Diode laser output mirrors of quality comparable to that of cleaved facets and two section coupled-cavity lasers which exhibit discrete and continuous tunability have been fabricated. Turning mirrors, angled at 45° to the epitaxial layers of the die to produce surface-emitting diode lasers, have also been micromachined with the focused ion beam (FIB). We have observed 330 mW of optical power from a surface-emitting 10 element phase-locked array. Development of FIB micromachining techniques needed to form the structures required for constructing a two-dimensionally coherent array of diode lasers are also described.

Citation Download Citation

R. A. Elliott, R. K. DeFreez, J. Puretz, J. Orloff, and G. A. Crow "Focused-Ion-Beam Micromachining Of Diode Laser Mirrors", Proc. SPIE 0876, Communications Networking in Dense Electromagnetic Environments, (3 May 1988); https://doi.org/10.1117/12.943928

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