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An integrated high linear L-band transceiver with an on-chip fault detector is demonstrated. The
transmitter and receiver exhibit an output 1dB compression point (OP1dB) of 12dBm and 15dBm
respectively under 3.3V operation voltage. The transceiver has high linearity and low power
consumption. The transceiver works at a time division mode by adopting an on-chip switch for radar
applications. The measurement result shows an isolation of 64dBc between the transmitter and
receiver. The transceiver is fabricated in a standard 0.35 um SiGe technology with a chip area of 2.5
mm × 3.3 mm, including contact pads.
Song Ye andJun Fan
"An integrated L-band transceiver in 0.35μm SiGe for radar applications", Proc. SPIE 8768, International Conference on Graphic and Image Processing (ICGIP 2012), 87687A (14 March 2013); https://doi.org/10.1117/12.2002253
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Song Ye, Jun Fan, "An integrated l-band transceiver in 0.35um sige for radar applications," Proc. SPIE 8768, International Conference on Graphic and Image Processing (ICGIP 2012), 87687A (14 March 2013); https://doi.org/10.1117/12.2002253