Laser induced changes of the optical properties of obliquely deposited thin chalcogenide films

A. Lalova; R. Todorov

doi:10.1117/12.2013735

15 March 2013 Laser induced changes of the optical properties of obliquely deposited thin chalcogenide films

A. Lalova, R. Todorov

Proceedings Volume 8770, 17th International School on Quantum Electronics: Laser Physics and Applications; 87700A (2013) https://doi.org/10.1117/12.2013735
Event: Seventeenth International School on Quantum Electronics: Laser Physics and Applications, 2012, Nessebar, Bulgaria

Abstract

The object of the present work is investigation of the role of the actual conditions of illumination on the magnitude of photo-darkening for a specific material (the incident photon flux and the penetration depth of absorbed photons). It was found that the photo-induced changes in the thin As₂S₃ film depend on the light intensity and they are affected by heating of the material at higher laser intensities. The influence of the deposition rate on the film’s microstructure was investigated. The conditions for deposition of coatings with columnar structure were determined. The photo-induced changes of the optical properties of the obliquely deposited thin As_40-xGexS₆₀ films are examined. It was established that the microstructure of thin As-Ge-S films can a play significant role in photo-induced volume changes.

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A. Lalova and R. Todorov "Laser induced changes of the optical properties of obliquely deposited thin chalcogenide films", Proc. SPIE 8770, 17th International School on Quantum Electronics: Laser Physics and Applications, 87700A (15 March 2013); https://doi.org/10.1117/12.2013735

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KEYWORDS

Thin films

Refractive index

Thin film deposition

Lamps

Optical properties

Chalcogenides

Halogens

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